The properties of electron transport in silicon carbide inversion layers are reviewed. Emphasis is put on the thermally-activated conductivity which prevails at low and room temperatures. The impact of interface disorder on the performance of SiC MOSFETs is discussed in detail. These transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO2 interface. High temperature operation is discussed more briefly.
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T. Ouisse (1997) studied this question.
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