Formation of Zn–O Complexes During the Molecular Beam Epitaxial Growth of GaP on Si

Heteroepitaxial GaP films were grown on (100) oriented Si substrates by molecular beam epitaxy. During the growth, the substrates were irradiated with a Zn molecular beam. At growth temperatures lower than 450°C, a broad band luminescence due to Zn–O complexes was observed at room temperature.