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May 22, 2015Japanese Journal of Applied Physics

GaN-based multi-two-dimensional-electron-gas-channel diodes on sapphire substrates with breakdown voltage of over 3 kV

Akihisa Terano Tomonobu Tsuchiya Kazuhiro Mochizuki Shigehisa Tanaka Tohru Nakamura

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Abstract

GaN-based multi-two-dimensional-electron-gas-channel diodes on sapphire substrates with breakdown voltage of over 3 kV, Terano, Akihisa, Tsuchiya, Tomonobu, Mochizuki, Kazuhiro, Tanaka, Shigehisa, Nakamura, Tohru

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Terano et al. (2015) studied this question.

synapsesocial.com/papers/6a8916093aa2d8278f760971 https://doi.org/10.7567/jjap.54.066503

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