Large coulomb blockade oscillations at room temperature in ultranarrow wire channel MOSFETs formed by slight oxidation process

We propose a new fabrication technique of room-temperature operating silicon single-electron transistors (SETs). The devices are in the form of ultranarrow wire channel MOSFETs, where a sub-10-nm channel is formed by wet etching and slight thermal oxidation. Large Coulomb blockade (CB) oscillations whose peak-to-valley current ratio at room temperature is as high as 6.8 are observed in the fabricated ultranarrow wire channel MOSFETs. It is found that larger CB oscillations are obtained in the ultranarrow wire channel SETs than in the point-contact channel SETs. It is considered that the potential fluctuations induced during the channel formation processes give rise to multiple-dot SET structures in the ultranarrow wire channel MOSFETs.