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October 1, 1986IEEE Electron Device Letters

Improved subthreshold characteristics of n-channel SOI transistors

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Authors

JDJ. DavisUniversity of Nebraska–LincolnAGA.E. GlaccumBT Group (United Kingdom)KRK.J. ReesonUniversity of Notre Dame

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Davis et al. (1986) studied this question.

synapsesocial.com/papers/6a8917603981116ebf4d2d9dhttps://doi.org/10.1109/edl.1986.26477
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