Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

This paper systematically studies high-current-induced effects, hot-carrier effects, and self-heating effects in flexible low-temperature polycrystalline-silicon thin-film transistors fabricated on polyimide. By utilizingI–Vand various-frequencyC–Vmeasurements, the exact location of defects generated by the self-heating effects can be clarified. The degradation mechanism is found to originate from asymmetric negative-bias temperature instability. After clarifying this mechanism, the self-heating effects were shown to be alleviated by manipulating the fabrication of the buffer layer, thereby improving heat dissipation capabilities.