The mechanism of kink in InP based InAlAs/InGaAs HEMTs is studied using HEMTs with a body contact (BC) electrode consisting of a buried p layer and a p-type contact. Kink modification was directly observed by varying BC bias, which shows kink is an anomalous suppression of drain current at low drain bias, not a parasitic current at high bias. Based on this result, the origin of kink is discussed.
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Suemitsu et al. (1996) studied this question.
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