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November 1, 1975IEEE Transactions on Electron Devices

Properties of ESFI MOS transistors due to the floating substrate and the finite volume

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JTJ. TihanyiSiemens (Germany)HSH. SchlöttererSiemens (Germany)

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Tihanyi et al. (1975) studied this question.

synapsesocial.com/papers/6a891769353a6a8ef2a5f29chttps://doi.org/10.1109/t-ed.1975.18262
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