Static current-voltage characteristics of low-voltage scaled power double-diffused MOSFETs fabricated using selectively formed TiSi/sub 2/ films on gate polysilicon and source contact regions are reported. It is shown that considerable modulation of drain-source current-voltage characteristics results from increased p-base sheet and contact resistances. This effect is found to vanish at higher operating temperatures. Increased p-base contact resistance also results in a large forward voltage drop for the body p-n junction diode.>
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K. Shenai (1991) studied this question.
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