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July 15, 2000Journal of Applied Physics

Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

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Authors

MSMasatomo SumiyaNational Institute for Materials ScienceKYK. YoshimuraOita UniversityTITakahiro ItoNagoya University

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Sumiya et al. (2000) studied this question.

synapsesocial.com/papers/6a8928f9185d41e08f7603eahttps://doi.org/10.1063/1.373791
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