A GaAs 16-kbit static RAM using dislocation-free crystal

A GaAs 16-kbit static RAM was developed using high-density integration technology and high-uniformity crystal. Highly integrated SAINT FET's with 1.0-µm gate length and 1.5-µm interconnection lines were formed by self-alignment and fine photolithography. Highly uniform crystal with less than 20-mV threshold scattering was obtained from an In-doped dislocation-free LEC with a 2-in diameter. An address access time of 4.1 ns was obtained with an associated power dissipation of 1.46 W.