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Tantalum pentoxide (Ta2O5) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta2O5rib waveguides doped with 2.7 1020erbium ions/cm3, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.
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Subramani et al. (2010) studied this question.
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