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February 1, 1981IEEE Journal of Quantum Electronics

Characteristics in InGaAs/InP avalanche photodiodes with separated absorption and multiplication regions

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Authors

NSNobuhiko SusaHitachi (Japan)HNH. NakagomeNTT Basic Research LaboratoriesHAH. AndoKonan University

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Cite This Study

Susa et al. (1981) studied this question.

synapsesocial.com/papers/6a893ea41fb56efa37d43ce8https://doi.org/10.1109/jqe.1981.1071059
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ionization coefficients measured in abrupt InP junctions1980 · 100 citations
  2. 2AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED <i>p-n</i> JUNCTIONS IN Ge, Si, GaAs, AND GaP1966 · 443 citations
  3. 3InGaAs avalanche photodiode with InP p - n junction1980 · 43 citations