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Theoretical device simulations and experimental results are presented to show that the origin of an empirical relationship between the bias voltage and transit frequency of CW longitudinal Gunn-effect devices lies in a combination of space-charge propagation effects and thermal effects. The bias current-voltage relationship is considerably altered by the particular details of the device doping profile through average accumulation or depletion effects, as well as by the temperature.
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Freeman et al. (1972) studied this question.
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