Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

Al1-xInxN layers grown on GaN by metalorganic vapor phase epitaxy (MOVPE) have been structurally studied using ω and 2θ-ω scans of X-ray diffraction (XRD) and a scanning electron microscope (SEM).Both ω and 2θ-ω scans of XRD measurements revealed that Al0.83In0.17N,which is thought to be lattice-matched to GaN, has the smallest full-width at half maximum.The surface morphology of Al0.83In0.17Nas observed by SEM was the smoothest among Al1-xInxN samples of various compositions.