Aluminum nitride (AlN) thin films have been synthesized on silicon substrates via microwave-excited electron cyclotron resonance (ECR) assisted chemical vapor deposition (CVD) at substrate temperatures ranging from 300 to 400°C from the AlBr3-N2-H2-Ar gas system. The resultant films were characterized using X-ray diffraction, scanning and transmission electron spectroscopies, transmission electron diffraction, infrared transmission spectroscopy, and Auger electron spectroscopy. The study of these analyses shows that highly c-axis-oriented polycrystalline AlN films, free of bromine and hydrogen impurities, can be deposited by the ECR plasma CVD method.
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Zhang et al. (1993) studied this question.