Yttria-stabilized zirconia (YSZ) films which have high crystalline quality and no dislocation near the YSZ/Si interface, have been epitaxially grown on Si(100) in spite of the relatively large lattice mismatch between YSZ and Si. The formation of the SiO2 layer at the YSZ/Si interface during the YSZ deposition takes an important part as a buffer layer in the epitaxial growth of YSZ films on Si.
No takes yet. Share an insight, caveat, or question.
Fukumoto et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: