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We present a fully reconfigurable optical filter built by cascading four identical unit cells. The devices are fabricated using two distinct methods: a complementary metal-oxide-semiconductor (CMOS) compatible process utilizes deep ultraviolet (DUV) lithography with tuning elements defined by ion implantation to make lateral p-i-n diodes for current injection regions, while an electron beam (E-beam) lithography process uses nickel chrome (NiCr) heaters as tuning elements. The fabricated devices are characterized using swept optical vector network analyzer (OVNA) coherent measurements.
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Djordjevic et al. (2010) studied this question.
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