Structure and dielectric properties of amorphous LiNbO3 thin films prepared by a sputtering deposition

Thin films of amorphous LiNbO3 were prepared by a sputtering deposition technique. Their structure and dielectric properties were studied. The as-sputtered amorphous LiNbO3 exhibited a dielectric anomaly close to the crystallization temperature. The dielectric anomaly was explained by the dielectric relaxation and the change in microscopic structure. The high dielectric constant and the dielectric relaxation were attributed to the Li ion transfer to the adjacent O-octahedron unit in the micronetwork which is similar to the crystalline LiNbO3.