Growth of III-VI compound semiconductors (Ga2S3, Ga2Se3 and Ga2Te3) has been tried for the first time by metalorganic molecular beam epitaxy (MOMBE). The growth rate decreases with increasing substrate temperature, and single crystal Ga2Te3 films were obtained on (100) InP substrates. In Ga2Te3 growth, the lattice mismatch between Ga2Te3 and the substrate is critical in obtaining good epitaxial films.
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Teraguchi et al. (1989) studied this question.
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