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Recent studies have shown that the Si-SiO2 interface is the source of an Auger peak at approximately 81–83 eV. Here we present the observation that exposure of a thinly (∼10 Å) oxidized silicon surface to approximately 60 langmuirs of H2 caused the interface-related Auger peak to disappear. This result may be related to the previously demonstrated hydrogen annealing of both interface states and ESR Pb centers at the interface.
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Jost et al. (1980) studied this question.
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