Crystallization in amorphous Ge2Sb2Te5 films has been demonstrated using scanning tunneling microscopes. Pulse voltages higher than 3 V applied through W tips produce electrically conductive deformed marks with a diameter larger than ∼50 nm. Raman scattering spectra show that such marks contain crystalline Te, which indicates that a structural phase change from amorphous to crystalline states is induced. The formation processes of the marks are discussed.
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Sugawara et al. (2004) studied this question.
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