Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001)

Reflection high-energy electron diffraction (RHEED) measurements have been carried out on vicinal GaAs(001) surfaces which are misoriented by 2° and 3° toward the [010] direction. The misorientation-angle dependence and the Ga-flux dependence of the growth-mode transitions for a fixed As/Ga ratio of approximately 2.5 have been reproduced by Monte Carlo simulations of a solid-on-solid model. The surface step-density evolutions generated by the simulations are remarkably similar in profile to the measured RHEED oscillations, and show approximately the same relative change of amplitude with temperature for the chosen diffraction conditions.