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Step-junction diodes are obtained from BF+2 implanted silicon irradiated by a single pulse of light from a flash lamp. The FWHM is 100 μs with energy densities ranging from 12.4 to 20.6 J/cm2. The sheet resistance and the I-V characteristic have been used to confirm the annealing process.
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Juh Tzeng Lue (1980) studied this question.
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