The hot hole relaxation dynamics is studied in a Mg-doped p-type GaN film grown by molecular-beam epitaxy on sapphire. A nondegenerate femtosecond pump-probe technique is used, in which the holes are excited by an infrared pump and the hole dynamics is monitored by a tunable near ultraviolet probe. Complex transients, showing bleaching or induced absorption, are observed. A hot hole energy relaxation time of 0.6 ps has been obtained. Modeling suggests that longitudinal optical phonon emission modified by hot phonon effects is the dominant energy relaxation process.
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Ye et al. (2000) studied this question.
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