Production and beam annealing of damagein carbon implanted Si. I

The disorder profiles of 25, 50 and 70 keV C+ implants in Si are studied by proton backscattering, using the channelling effect technique. The implantation and the analysis were carried out at room temperature. The measured disorder profiles show reasonable agreement with theory. Annealing of the introduced disorder by proton bombardment is observed. Furthermore, different annealing behaviour of the disorder is observed for different primary energies of the C+ ions.