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In this letter very high quantum efficiency GaSb mesa photodiodes with AlxGa1−xSb windows are reported for the first time. External quantum efficiencies (ηext) of ≃60% at zero bias and of ≃70% at −1 V near 1.3 μm have been obtained without antireflection coatings. More than 80% of the devices from several wafers exhibited ηext⩾50% at λ≃1.3 μm.
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Capasso et al. (1980) studied this question.
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