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In situ crystallized 20 nm thick SrTiO 3 (STO) thin films were grown on a Ru substrate by atomic layer deposition. The leakage current-voltage characteristics of the film were examined from 313 to 403 K under electron injection conditions from the Ru electrode. The leakage current was dominated by Schottky emission in the low electric field ( 0.3 MV/cm) region. The estimated effective mass of the tunneling electron was ~0.1m 0 .
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Lee et al. (2009) studied this question.
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