The gas-assisted focused ion beam etching characteristics of niobium have been investigated systematically in I2 and XeF2 gas atmosphere, respectively. The effects of the etching parameters, such as: ion beam current, dwell time, overlap percentage and gas species, on the niobium etching rate and on the gas-assisted etching enhancement have been studied. It was found that the overlap percentage had little effect on the etching characteristics of niobium. It also showed that the I2 radicals are more reactant with niobium than XeF2 radicals, and to obtain maximum improvement from the gas-assisted etching process one needs to select a smaller ion beam current with a shorter beam dwell time.
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Fu et al. (2005) studied this question.
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