Velocity saturation effects in n-channel deep-depletion SOS/MOSFET's

We use the n-channel deep-depletion SOS/MOSFET to measure carrier velocity of electrons in thin SOS films. The data are presented as a function of electric field up to the point where the velocity saturates. We show the consistency of these data across devices of different gate lengths and manufacture operating at different gate voltages. These results lead to the concept of a "universal curve" for the carrier velocity versus electric field relationship which can be applied to the modeling of velocity-saturation effects in n-channel SOS/MOSFET's. We develop a technique for such an application. In addition, by compensating for the effect of surface scattering on mobility, we have been able to show that the velocity versus field relationship at the surface of thin SOS films agrees very closely to that obtained from bulk silicon.