TCAD Assessment of Device Design Technologies for Enhanced Performance of Nanoscale DG MOSFET

In this paper, the effect of various device design engineerings such as channel engineering, i.e., graded channel (GC), gate stack (GS) engineering (high-κ), and dual-material gate (DMG) on double-gate MOSFET (DG MOSFET) have been analyzed using ATLAS device simulator. Furthermore, the combinations of these technologies i.e., GC, along with GS engineering, i.e., GCGSDG, and GS together with DMG, i.e., GS dual-material DG (GSDMDG), have been taken into consideration. The simulation results demonstrate that, out of the several design engineerings, the GCGSDG is the most suitable for high-speed switching applications. However, the GSDMDG provides superior performance as an amplifier.