What question did this study set out to answer?

Fabricate top-gate amorphous silicon thin film transistors with high-quality gate insulator interfaces without exceeding a substrate processing temperature of 250°C.

June 1, 1994Japanese Journal of Applied Physics

Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors

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Authors

TSToshiyuki SameshimaTokyo Electron (Japan)AKA. KohnoKyushu University MSM. SekiyaPlanetary Science Institute

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Implication

Experimental study demonstrates improved gate-insulator interface quality in low-temperature amorphous silicon thin film transistors, indicating viable low-thermal-budget display electronics.

Key Points

Fabricate top-gate amorphous silicon thin film transistors with high-quality gate insulator interfaces without exceeding a substrate processing temperature of 250°C.
Fabricated n-channel aluminum top-gate amorphous silicon thin film transistors (a-Si TFTs) with silicon dioxide (SiO2) gate oxide.
Formed the SiO2/a-Si interface using reactive evaporation of SiO powder in an oxygen atmosphere at a 2 sccm flow rate and 1×10⁻⁴ Torr pressure, maintaining temperatures below 250°C.
Achieved a low threshold voltage of 0.86 V, carrier mobility of 1.1 cm²/V·s, and a subthreshold slope of 0.12 V/decade.
Obtained a high-quality SiO2/a-Si interface characterized by a low trap state density of 1.6×10¹¹ cm⁻²·eV⁻¹.

Cite This Study

Sameshima et al. (1994) studied this question.

synapsesocial.com/papers/6a8a9278fce154801ccbf199 https://doi.org/10.1143/jjap.33.l834

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Implication

Experimental study demonstrates improved gate-insulator interface quality in low-temperature amorphous silicon thin film transistors, indicating viable low-thermal-budget display electronics.

Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors

Discussion

Member takes

Implication

Key Points

Cite This Study

Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors

Discussion

Member takes

Implication

Key Points

Cite This Study

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