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July 18, 1994Applied Physics Letters

Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP decomposition source

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TST. ShitaraKEK. Eberl

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Shitara et al. (1994) studied this question.

synapsesocial.com/papers/6a8a9fe3176d2ac34cfbee6bhttps://doi.org/10.1063/1.112373
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Also Consider

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  5. 5Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by <i>C</i>-<i>V</i> profiling1987 · 197 citations