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The minority-electron velocity versus electric field (v-E) relationship was measured for selectively Be-doped Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As single quantum wells with different well-layer thicknesses by means of the time-of-flight (TOF) method at room temperature. It was found that the electron drift velocity for the 200-Å-thick quantum well is suppressed in comparison with those for the 600-Å-thick and 2000-Å-thick wells. This suppression is successfully explained by considering that the electron-hole interaction is enhanced in narrower wells due to a larger overlap of the wave functions of electrons and holes.
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Shigekawa et al. (1990) studied this question.
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