The recrystallization mechanism for solid-phase growth of poly-Si films amorphized by ion implantation on quartz substrates is clarified on the basis of an experimental finding obtained through the TEM observation. It is found that the {110} textured nucleation occurs. The preferential growth in the <112 > directions along twin boundaries then leads to the formation of the dendritic structure.
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Nakamura et al. (1988) studied this question.
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