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Temperature measurements have been made on Gunn diode samples, using both infrared (IR) and micro-Raman spectroscopy. Micro-Raman spectroscopy was used to give high-resolution temperature measurements on the active transit region of the Gunn diode. These were directly compared with IR thermal measurements made across the mesa region and also on the metallized top contact of the diode.
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Hopper et al. (2008) studied this question.
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