Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction

This is the authors' abstract. We don't add key points for this paper.

Electrical properties of a heterojunction between a p-type polycrystalline diamond and n-type hydrogenated amorphous silicon (a-Si:H) are described for the first time. The current(I)-voltage(V) characteristics of the p-n heterojunction show good rectification, and the capacitance(C)-voltage(V) characteristics show an approximate linear C -2-V relationship in the reverse bias condition. These results and other experimental evidence have confirmed that the rectification is caused by the depletion layer in the vicinity of the junction.