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November 22, 2023Cell Reports Physical ScienceOpen Access

3D interconnects for III-V semiconductor heterostructures for miniaturized power devices

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Authors

MLMathieu de LafontaineInstitut polytechnique de GrenobleTBThomas BidaudUniversité Paris-SaclayGGGuillaume GayUniversité Claude Bernard Lyon 1

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Implication

Experimental study demonstrates 3D interconnects for III-V multijunction solar cells, indicating enhanced power density and wafer area efficiency for miniaturized devices.

Key Points

  • To develop and integrate three-dimensional interconnects into III-V semiconductor heterostructures for ultra-miniaturized photonic power devices.
  • Fabricated 3D through-substrate vias into multijunction solar cell heterostructures using plasma etching, gold electrodeposition, and chemical-mechanical polishing.
  • Integrated wafer bonding techniques to manage and process 20-μm-thin III-V films.
  • Demonstrated photonic power devices with footprints three orders of magnitude smaller than standard chips.
  • Achieved a low shading factor under 3% alongside a 6-fold increase in wafer area utilization compared to two-dimensional connection schemes.

Cite This Study

Lafontaine et al. (2023) studied this question.

synapsesocial.com/papers/6a8aecb90269824ff8336f8bhttps://doi.org/10.1016/j.xcrp.2023.101701
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