The microstructure and electrical properties of the WOX-based resistive random access memory are investigated in this letter. The WOXlayer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOXlayer and result in a low initial resistance. This letter studies the unipolar operation- the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 107times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.
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Chien et al. (2010) studied this question.
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