The lateral range of oxidation enhanced diffusion (OED) of B and P in Si is investigated using selective oxidation at 1100°C with directly formed Si3N4 films as oxidation resistant masks and FZ Si crystals as substrates. It is found that this OED range of B agrees well with that of P and that the range increases with oxidation time. The value of the range is found to be much larger than previously. The results can be explained using a model in which the range is determined by interstitial diffusion.
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Mizuo et al. (1982) studied this question.
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