Answers are grounded in this paper and cite their sources.
This paper attempts to provide a technical perspective for a 1 µm MOSFET VLSI technology described in the technical papers that follow. Highlights of various aspects of the technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography, metal silicide interconnections and radiation effects.
No takes yet. Share an insight, caveat, or question.
Yu et al. (1979) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: