Effect of argon implantation on the activation of boron implanted in silicon

Argon ions were implanted either prior or subsequent to an ion implantation of boron into silicon wafers. After isochronal annealing at temperatures ranging from 500 to 900 °C, the samples were examined by a spreading resistance-carrier concentration profile and secondary ion mass spectroscopy. It is shown that argon implantation at a dose sufficient to produce an amorphous layer inhibits the electrical activation and diffusion of boron implanted in silicon.