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The behavior during annealing of heavily doped silicon layers obtained by a high-current-density ion implantation, realized by discharge in BF3 atmosphere, is investigated. The annealing is performed by a laser pulse and the surface layers are studied by Rutherford backscattering, SIMS, and conductivity measurements. Comparisons with thermal annealing show the advantage of using laser pulses to restore the original crystallinity.
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Müller et al. (1978) studied this question.
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