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A technique to develop an undoped homojunction chalcogen thin-film transistor (UHJ-c-TFT) on glass is described. The UHJ-c-TFT is based on ternary chalcogenide alloy amorphous (α) Ge2Sb2Te5 (GST) and the positively cooled crystalline (χ) GST. The α-GST and the positively cooled χ-GST are used as a channel layer and ohmic contact layer, respectively. In the UHJ-c-TFT, the authors realize electric rectification by the energy difference from the Fermi level of the α-GST and the Fermi level of the positively cooled χ-GST. The UHJ-c-TFT shows the clear gate characteristics of a typical p-channel enhancement mode.
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Song et al. (2007) studied this question.
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