Growth of high-purity bulk semi-insulating GaAs by the Liquid-Encapsulated Czochralski (LEC) method has produced thermally stable, high-resistivity crystals suitable for use in direct ion implantation. Large round substrates have become available for integrated-circuit processing. The implanted wafers have excellent electrical uniformity (±4 percent Vp) and have shown electron mobility as high as 4800cm2/V.s for Se implants with 1.7 × 1017cm-3peak doping. Careful control of background doping through in situ synthesis has produced GaAs with Si concentrations as low as 6 × 1014cm-3grown from SiO2crucibles. Detailed results of qualification tests for ion implantation in LEC GaAs will be discussed. Feasibility of successful high-speed GaAs large-scale integrated circuits using LEC substrates will be described.
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Fairman et al. (1981) studied this question.
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