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An analysis of the transient response of the GaAs FET by means of a distributed model is presented. Using a numerical-technique based on the direct evaluation of the Bromwich integral for inverse-Laplace transform, the propagation delay and rise time of devices with different gate widths are obtained. Results indicate that propagation effect is significant when the gate width exceeds 150 µm for a typical MESFET. The presented method can serve as the basis of time-domain device parameter optimization in CAD routines.
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Thomas Wong (1985) studied this question.
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