A Poly-Silicon TFT With a Sub-5-nm Thick Channel for Low-Power Gain Cell Memory in Mobile Applications

This work presents a gain-cell solution in which a novel ultrathin polysilicon film transistor provides the basis for dense and low-power embedded random-access memory (RAM). This is made possible by the new transistor's 2-nm-thick channel, which realizes a quantum-confinement effect that produces a low leakage current value of only 10/sup -19/ A at room temperature. The memory has the potential to solve the power and stability problems that static RAM (SRAM) is going to face in the very near future.