Photocurrent-Induced 1/f Noise in A III B V T2SLs Infrared Detectors

This letter focuses on the 1/f noise induced by a photocurrent in infrared (IR) detectors based on the AIIIBV InAs/GaSb, and InAs/InAsSb type-II superlattices (T2SLs) optimized for mid-, or long-wavelength range. The relative photocurrent 1/f noiseα ₚₕ≈ 3× 10^-11andα ₚₕ≈ 7× 10^-11were found for detectors based on InAs/GaSb and InAs/InAsSb T2SLs, respectively. It was shown that the dark current generates1/fnoise much more efficiently than the photocurrent in all detectors. The lowest relative dark current 1/f noiseα d≈ 4× 10^-8was obtained for interband cascade InAs/InAsSb T2SL detectors. The correlation between the photocurrent and the dark current 1/f noises was extracted, suggesting that both components partially origin the same source.