Deep level transient spectra, electroluminescence spectra, and light output versus current were measured on diodes degraded by a current stress. It has been shown that the drop in electroluminescence efficiency can be related to a new deep level formed by recombination enhanced reaction from the electron trap attributed to the nitrogen pair in the phosphorus site with silicon in the nearest gallium site.
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Žďánský et al. (1998) studied this question.
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