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This work describes the design and the measured performance of a high-efficiency monolithic microwave integrated circuit (MMIC) amplifier for wireless communications in the 2.4 GHz band. The monolithic technology employed in the circuit integration is based on standard 0.5-/spl mu/m-gate-length MESFET. The design procedure is based on load-cycle graphic optimization of the transistor performance. On-wafer experimental characterization shows output power up to 24 dBm and excellent results of power-added efficiency up to 79% with 19.5 dBm output power at low drain bias voltage. The amplifier performance achieved and the circuit size, which is 1 mm/sup 2/, are suitable for use in the transmitter chains of wireless communication systems in the 2.4 GHz band.
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Portilla et al. (1999) studied this question.
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